| 摘要 |
In a method for producing a field effect transistor, a positive photoresist is deposited on a surface of a semiconductor substrate, the positive photoresist is exposed to light having an asymmetric intensity profile where a gate electrode is to be formed, the positive photoresist is converted into a negative photoresist, the negative photoresist is developed to form a pattern having an aperture opposite the gate electrode formation region of the substrate and asymmetric overhanging portions at the aperture, the semiconductor substrate is wet etched using the photoresist pattern as a mask to form a recess in the semiconductor substrate, and a gate metal is deposited using the photoresist pattern as a mask to form a gate electrode in the recess. Therefore, only one exposure process provides a photoresist pattern having asymmetric overhanging portions at the aperture of the pattern. |
