发明名称 |
Method of forming an ohmic contact to III-V semiconductor materials |
摘要 |
An ohmic contact to a III-V semiconductor material is fabricated. First, a III-V semiconductor material is provided. Source/drain regions are then formed in the III-V semiconductor material. On the III-V semiconductor material, a contact system is formed which is dry etchable using reactive ions such as chlorine or fluorine and substantially free of arsenic. Subsequently, a portion of the contact system is dry etched using reactive ions such as chlorine or fluorine to leave a portion of the contact system remaining on the source/drain regions. Then, the III-V semiconductor material and the contact system are annealed in an atmosphere substantially free of arsenic at a temperature at which at least a part of the contact system is alloyed with the source/drain regions to form an ohmic contact with the source/drain regions of the III-V semiconductor material.
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申请公布号 |
US5275971(A) |
申请公布日期 |
1994.01.04 |
申请号 |
US19920871785 |
申请日期 |
1992.04.20 |
申请人 |
MOTOROLA, INC. |
发明人 |
WU, SCHYI-YI;LIAW, HANG M.;MOYER, CURTIS D.;VOIGHT, STEVEN A.;LESK, ISRAEL A. |
分类号 |
H01L21/285;H01L23/532;(IPC1-7):H01L21/441;H01L21/324 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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