Method for preparing resist patterns utilizing solvent development with subsequent resist pattern transfer, via a photo-hardening liquid adhesive, to a receiver substrate and oxygen reactive ion etching

摘要

A method of preparing a fine pattern on a substrate characterized by the dry development of a photoimaged, etch resistant pattern on a receiver substrate. The pattern is transferred from a carrier substrate to the receiver substrate via a hardenable liquid adhesive. This method eliminates adverse reflection effects caused from substrate topography in single layer photoresist systems and also avoids time consuming multiple coatings in multilayer photoresist systems used to make fine patterns. The method is particularly useful in the fabrication of integrated circuits and fine dimension patterns.