| 摘要 |
Certain GaAs FET devices are employed to accomplish low noise performance and simultaneous high power handling capability, i.e. high dynamic range performance, in an amplifier using larger GaAs FET devices. Such devices are incorporated in different circuit configurations to achieve amplifiers having, simultaneously, a low noise figure, higher input/output intercept performance, higher output power, and improved ruggedness toward high input interfering signals, while not sacrificing other highly desirable terminal characteristics, (i.e. gain, VSWR, etc.).
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