Methods of chemical vapor deposition (cvd) of films on patterned wafer substrates

摘要

Methods of chemical vapor deposition (CVD) are disclosed wherein high quality films are deposited on patterned wafer substrates. In the methods, a patterned wafer is rotated about an axis thereof in a CVD reaction chamber and reactant gases are directed into the reaction chamber and toward the patterned wafer substrate in a direction generally perpendicular to the plane of rotation of the wafer. The reaction chamber is maintained at a suitable pressure and the wafer is heated to a suitable temperature whereby a high quality film is deposited by CVD on the patterned wafer substrate. The process is applicable to deposit elemental films, compound films, alloy films and solid solution films, and is particularly advantageous in that high film deposition rates and high reactant conversion rates are achieved.