| 摘要 |
A rotation rate sensor has a multi-layer structure, with an oscillatory body (13) formed in one carrier layer (10). The body can be stimulated to oscillate in a first oscillation direction (1). On top of this body (13), a further structural element (21), which is deflectable normal to the major surface of the carrier (10) and which serves to detect Coriolis acceleration, is located. There is a device for capacitive or piezo-resistive measurement of the deflection of the structural element. Preferably, the entire structure is fabricated from a silicon wafer, so that the measurement device can be integrated onto the sensor element.
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