| 摘要 |
A fuse protection circuit for an electrically programmable read only memory circuit consists of a fusing element such as an antifuse connected between a bitline and the drain of the access transistor, and which is susceptible to inadvertent activation due to programming voltages applied to the bitline when the access transistor is not being addressed. The fusing element is protected from such inadvertent activation by the addition of a capacitor between the drain of the access transistor and the bitline.
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