发明名称 |
Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits |
摘要 |
A zener diode with a low reverse breakdown avalanche voltage and the use of zener diode in electrostatic discharge protection circuit is described herein. The low breakdown avalanche voltage is achieved by creating a zener diode with a lightly doped region between the P+ and N+ zones. Zener diode disclosed herein is particularly useful in protection circuits for integrated circuits having features or sizes of one micron or less.
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申请公布号 |
US5276350(A) |
申请公布日期 |
1994.01.04 |
申请号 |
US19920899833 |
申请日期 |
1992.06.16 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
MERRILL, RICHARD B.;CHEN, KAI |
分类号 |
H01L23/60;H01L27/02;H01L29/866;(IPC1-7):H01L29/90;H01L29/88;H01L23/62;H01L31/107 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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