Semiconductor memory device having a bit line constituted by a semiconductor layer

摘要

A DRAM cell having a bit line constituted by a semiconductor layer. The DRAM cell comprises a semiconductor substrate of a first conductivity type having a main surface, an insulating film formed on the main surface, an opening formed in the insulating film to communicate with the substrate, and a bit line formed by a semiconductor layer of a second conductivity type formed on the insulating film and that portion of the substrate which is exposed through the opening.