SHORT CHANNEL VVMOSSFET

摘要

PURPOSE:To reduce the operating resistance of a short channel V-MOS-FET without increasing the area of the chip by shortening the channel length without decreasing the punch through withstand voltage thereof. CONSTITUTION:A semiconductor region 8 having the same conducting type as an n<+>type low specific resistance layer substrate 1 and substantially equal specific resistance thereto is formed at the projected region disposed at the n<+>type low specific resistance layer substrate 1 side of the groove formed to reach the substrate 1 through the substrate 1 and a channel forming layer 2. When the projected height of the region 8 and the width thereof are set at suitable values, it can set the short channel length between the source and the drain without decreasing the punch through withstand voltage thereof.