| 摘要 |
An X-ray exposure mask for use in a stepper for transferring patterns onto a semiconductor substrate without deformation of the patterns comprises a membrane translucent to X-ray and light beam, and an absorber formed thereon, the surface of the mask being divided into two regions : a first region (15) centrally located and where the patterns (14) to be transferred onto the semiconductor substrate are formed, and a second region (16) surrounding the first region, and where patterns in the form of void portions without absorber material are formed. The pattern densities in the first and second regions are selected to be substantially the same, whereby deformation of patterns in the first region (15) is balanced and reduced by the tensile or compressive forces generated in the second region (16). |
