发明名称 INTEGRATED SEMICONDUCTOR CIRCUIT WITH POLARITY REVERSAL PROTECTION.
摘要 PCT No. PCT/EP89/01401 Sec. 371 Date Dec. 12, 1991 Sec. 102(e) Date Dec. 12, 1991 PCT Filed Nov. 9, 1989 PCT Pub. No. WO90/06012 PCT Pub. Date May 31, 1990.An integrated semiconductor circuit for use in a low voltage (1.5-2 V) battery operated device is provided with a protection circuit against reverse connection of the battery. The protection circuit takes care that the substrate is always connected to one extreme potential and a region containing one or more resistors is always connected to the other extreme potential irrespective of the proper or reverse mode of connection of the battery. The protection circuit has been designed in such a way that no voltage drop occurs between the battery connections and the supply voltage connection terminals of the integrated semiconductor circuit.
申请公布号 EP0399020(B1) 申请公布日期 1993.12.29
申请号 EP19900900094 申请日期 1989.11.09
申请人 B.V. OPTISCHE INDUSTRIE "DE OUDE DELFT" 发明人 SCHELEN, JOHANNES, BERNARDUS, JOZEF
分类号 H01L27/02;H02H11/00 主分类号 H01L27/02
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