| 摘要 |
PURPOSE:To manufacture an information processor proper to the operation at high speed of a fine displacement element by mounting a probe detecting tunnel currents to a cantilever composed of an elastic body thin-film and one piezoelectric thin-film held by a pair of electrodes on one surface of a silicon substrate. CONSTITUTION:An Si3N4 film is formed onto an Si substrate 1 as an elastic body thin-film 2. The Young's modulus of the film is 2X10<11>N/m<2>. The elastic body thin-film 2 is patterned in a desired shape, and Cr and Au are flit-formed and patterned. ZnO is film-formed as a piezoelectric body thin-film 4. ZnO is used as a target and sputtered in an O2 atmosphere, and patterned. An upper electrode 5 is shaped through the same manufacture as a lower electrode 3. W is film-formed as an electrode material for a probe, the probe 6 is manufactured through photolithography and lift-off, and the desired section of the Si substrate 1 is removed through the anisotropic etching of Si by KOH, thus manufacturing a fine displacement element. |
