FORMATION OF RESIST PATTERN

摘要

PURPOSE:To solve the problem of an ion-implanted hardened layer in the removal of a resist film used for an ion-implantation. CONSTITUTION:At the time of a patterning of a resist film 3 using a multilayer resist method, a multitude of openings 10 having a dimension of an exposure wavelength shorter than the limit of the resolution of an exposure wavelength are formed in an impermeable part of a photomask 4, whereby the patterning of the film 3 is performed and recesses and projections are formed in and on the upper surface of a pattern formed as a result.