| 摘要 |
PURPOSE:To reduce the leakage current of an element and to enhance the light-emitting efficiency and the modulation characteristic of the element by a method wherein a current-blocking layer is constituted of the following: a low-concentration p-type semiconductor layer with which the side face of at least a light-emitting region is covered; and a high-resistance semiconductor layer which is formed at its outside and which is provided with a deep donor level or a deep acceptor level. CONSTITUTION:A current-blocking layer 10 is formed as a three-layer structure which is composed of a p<-> type InP layer 11, a Ti-doped InP layer 12 and an Fe-doped InP layer 13. In the Ti-doped semi-insulating InP layer 12, Ti acts as a hole trap; in the Fe-doped semi-insulating InP layer 13, Fe acts as an electron trap. As a result, the p<-> type InP layer 11 acts as a barrier which restrains carriers from being injected, and the Ti-doped InP layer 12 and the Fe-doped InP layer 13 act for restraining a recombination current by means of the double injection of electrons and holes. Thereby, it is possible to reduce a leakage current which flows by bypassing the outside of an active layer 4. |
