发明名称 MASTER SLICE SYSTEM SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PURPOSE:To obtain a master slice system semiconductor integrated circuit device capable of supplying a plurality of power supply voltages, by previously dividing a substrate into a plurality of substrates, and applying different power supply voltages to I/O circuits on the different substrates. CONSTITUTION:A substrate of an I/O circuit part is previously divided into a substrate 23 to which a power supply voltage VDD1 is applied, a substrate 24 to which a power supply voltage VDD2 is applied, and a substrate 25 to which ground potential is applied. MOS transistors 26, 27 are formed on the substrate 23. MOS transistors 28, 29 are formed on the substrate 25. Transistors 30, 31 and 32, 33 are formed on the substrates 24, 25. By using metal wirings in a slice cell, the transistors 26, 28 are connected so as to constitute a first inverter circuit, and the transistors 27, 29 are connected so as to constitute a second inverter circuit cascade-connected to the first inverter circuit. Hence undesired currents do not flow between two power supplies through a substrate, and the voltage to be applied can be freely set as a voltage most suitable to circuit operation.</p>
申请公布号 JPH05343648(A) 申请公布日期 1993.12.24
申请号 JP19920152131 申请日期 1992.06.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 TANIGUCHI HIDEKI;TOMIOKA ICHIRO;SANADA KUNIHIKO;OKABE MASAOMI
分类号 H01L21/82;H01L27/118;(IPC1-7):H01L27/118 主分类号 H01L21/82
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