| 摘要 |
<p>PURPOSE:To accurately detect a light irradiating position and to simplify a layer structure. CONSTITUTION:An optical potentiometer 100 is formed by depositing a silicon semiconductor film on a metal board 1 in an n-i-p-i-n layer structure to form a photoelectric conversion film 2. The film 2 is sequentially formed from the side of the board 1 n-type semiconductor 21 of a-Si (amorphous silicon), i-type semiconductor 22 of a-SiC (amorphous silicon carbide), p-type semiconductor 23 of a-SiC, i-type semiconductor a-Si and p-type semiconductor 25 of a-Si (microcrystalline silicon). Input electrodes 3a, 3b are pattern-formed thereon, and a transparent protective film 4 is laminated. Since the semiconductor 25 of the film 2 is used as a reference resistor used also as a transparent resistor film, the potentiometer 100 is simplified in a layer structure. Since it is so serially connected that polarities of two diode components become reverse, no leakage current is generated, and a light irradiating position can be accurately detected.</p> |
