| 摘要 |
PURPOSE:To obtain a ZnSe light emitting element having a high light emitting efficiency by using an n-type ZnSe layer containing Cl and Li as impurities. CONSTITUTION:After a surface of a substrate 6 is initially chemically cleaned, a support base 7 is so disposed that a surface (100) is front side in a chamber 1. Then, the chamber 1 is evacuated and held in vacuum. Thereafter, the substrate 6 is heated, purified, and held at a predetermined temperature (desirably 250-450 deg.C). Then, a Zn cell 2, an Se cell 3, an Li cell 4 and a Cl cell 5 are so heated and held as to become desired molecular beam dose, and Zn molecules, Se molecules, Li molecules, and Cl molecules are evaporated from the respective cells. The substrate 6 is irradiated with molecular beams of the Zn, Se, Li and Cl molecules on the surface (100) thereof to form an Li- and Cl-doped n-type ZnSe layer. |
