| 摘要 |
<p>PURPOSE:To obtain an X-ray mask in which a silicon wafer is connected to a supporting frame with sufficient strength and which has excellent parallelism by connecting the wafer to the frame by an adhesive layer for holding spacers of uniform sizes. CONSTITUTION:Silicon carbide (SiC) of a material of a membrane thin film 2 are formed into films on both side surface by a chemical vapor depositing method by using dichlorosilane and acetylene as materials on a silicon wafer 1. Then, a central part of the film 2 of one side is removed by etching. The wafer 1 is connected to a supporting frame 4 with an adhesive layer 5. As the adhesive of the layer 5, epoxy series is, for example, used, and silica powder having uniform particle size is mixed for spacers 6 having uniform sizes therein. Thus, an X-ray mask having sufficient strength and sufficient parallelism between the wafer and the frame is obtained.</p> |
