| 摘要 |
PURPOSE:To manufacture an optical semiconductor element wherein it is provided with a waveguide whose scattering loss is small and its leakage of an injected current is small by a method wherein the surface of a ridge is covered with a stripe-shaped mask and semiconductor current-blocking layers are epitaxially grown on both sides of it. CONSTITUTION:A surface of an n-type InP substrate is covered with two SiO2 thin-film masks 8; an n-type InP layer, an InGaAsP active layer and a p-type InP layer are laminated sequentially, by a selective MOVPE method, on a region which is sandwiched between the masks 8 and whose interval is 2mum; a ridge 9 whose side face is a (111) plane is formed. The masks 8 are stripped; after that, the surface of the ridge 9 is covered with an SiO2 thin-film mask 10; a p-n-p-n type InP current-blocking layers 3 are formed on both sides of the mask 10. Thereby, it is possible to realize an optical semiconductor element which can prevent an electric current from being leaked to the outside of an active region and which is provided with a current constriction constitution. |
