| 摘要 |
<p>PURPOSE:To heighten the probability that hot electron goes through a gate insulating film and a gate electrode and heighten the drawn electric current out of a cold cathode. CONSTITUTION:A MIS-type cold cathode electron emitting apparatus is composed of a cathode electrode 37 formed on a substrate 31, an ultra thin gate electrode 35 formed on the substrate 31 while having an ultra thin gate insulating film 34 between them, and anode electrode 38 set on the opposite to the cathode electrode 37. Regarding the MIS-type cold cathode electron emitting apparatus wherein electrons are emitted from the gate insulating film 34 to the anode electrode 38 by applying voltage between the cathode electrode 37 to the anode electrode 38, the gate insulating film 34 and a gate electrode 35 are formed on the substrate 31 while having a high resistance layer 3 between the substrate 31 and them.</p> |
