| 摘要 |
PURPOSE: To provide a method for forming a recess having a width of nanometer order in a material layer. CONSTITUTION: This is a method for forming a narrow recess in a silicon nitride layer. First, a wide recess 5 is formed in a layer 3. Then, a layer 7 made of a metal such as aluminum is formed by evaporation on a side face of the recess 5. Next, the rest of the wide recess is filled with a material such as silicon nitride. Then, the metal layer 7 is eliminated by etching, and then a narrow recess which has the same width as that of the metal layer 7 is formed in the silicon nitride layer.
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