| 摘要 |
PURPOSE:To prevent broadening of a spectral distribution of a photoluminescence and to improve a light emitting efficiency by injecting the same element as that of an impurity of a conductor layer to a thin film epitaxial layer as an impurity. CONSTITUTION:A semiconductor device has a semiconductor layer 3a containing an impurity (e.g. Zn), and a multilayer epitaxial crystalline structure 3c in which a plurality of thin film epitaxial layers 31, 32 are alternately laminated adjacent to the layer 3a. The same element as that of the impurity of the layer 3a is previously injected in the layers 31, 32 as an impurity. An upper limit of doping dose of the impurity is up to a saturated concentration, and a lower limit is up to about a concentration of adjacent layer (p-type active layer) 3a. Thus, when it is applied to a light emitting element, an impurity concentration gradient between the structure 3c and the layer 3a adjacent thereto is reduced, broadening of a spectral distribution of a photoluminescence is prevented, and a light emitting efficiency can be improved. |
