METHOD OF FABRICATING A ROUGH SURFACE POLY-SI GROWTH BY SOLID PHASE CRYSTALLIZATION

摘要

The charge-storing electrode of DRAM cell capacitor having a larger surface is prepared by depositing a silicon layer of a thickness for charge-storing electrode at a lower temperature than the temperature for transferring amorphous silicon into polycrystalline silicon by LPCVD method, filling the reactor tube with an inert gas, heat-treating the deposited silicon layer at 600 deg.C or more under tens to hundreds torr for 1-12 hours to change silicon layer surface into a hemispheric shape.