| 摘要 |
PURPOSE:To obtain the alkali-developable negative type photoresist composition high in film endurance and sensitivity and also dry etching resistance by using a polymer compound having specified structure unit. CONSTITUTION:This photoresist composition is composed essentially of the polymer compound having the structural unit represented by formula in which R1 is H or methyl; R2 is H, halogen such as Cl, Br and I or 1-6C alkyl or such alkoxy; R3 is H, lower alkyl, optionally substituted aryl, aralkyl, such as benzyl, or the like; R4 is H, halogen, lower alkyl, lower alkoxy, aryl, aralkyl, or the like; R5 is H or a univalent group; and n is 1 or 2. |
