| 摘要 |
<p>PURPOSE:To improve the image grade of the display device by preventing the degradation in the insulation characteristic of a metallic wiring substrate and further by the lower resistance of metallic wirings. CONSTITUTION:The infiltration of Ta ions or Nb ions, etc., into the substrate 1 or substrate protective film into which N is incorporated does not arise in the stage for forming the metallic wirings 3 by using Ta or Nb on the substrate 1 or the substrate protective film and anodizing the surfaces on these metallic wirings 3. N is doped into the substrate 1 or the substrate protective film and a Ta layer is formed by sputtering thereon. The sputtering method has the characteristic that the material in the substrate 1 intrude into the film formed in the initial stage of deposition and, therefore, the doped N intrudes into the Ta film and alpha-Ta is thinly formed at the boundary with the substrate 1 or the substrate protective film. The Ta layer to be deposited on the upper layer of the alpha-Ta layer grows epitaxially to the alpha-Ta and since this layer does not contain the impurities, the Ta film of the relatively low specific resistance is formed.</p> |
