| 摘要 |
PURPOSE:To obtain an excellent ohmic contact by combining a BPSG insulation film with a titanium nitrifying film-made barrier metal. CONSTITUTION:A silicon oxide film 4 (BPSG) containing B and P is laid out on a silicon board 1 as an insulation film where a first metal film 5 containing a titanium nitriding film and an Al alloy-made second metal film 6 containing Si are laid out thereon. The first metal film 5 and the second metal film 6 are electrically connected to an impurity diffusion layer 2 formed on the board 1 by way of a contact hole 7 formed on the BPSG film 4. At that time, the first metal film 5 prevents the B contained in the BPSG film form diffusing into the second metal film 6 and the silicon contained in the second metal film 6 from selectively solid-state epitaxially growing on the surface of the board 1 on the bottom of a control hole 7. This construction make it possible to produce an excellent ohmic contact, flattening the surface of a circuit. |
