| 摘要 |
PURPOSE:To raise accuracy in resistance by correcting an irregularity in a resistivity of a polycrystalline silicon at the time of exposing a resistor pattern in a method for manufacturing a semiconductor integrated circuit device using a polycrystalline silicon resistor. CONSTITUTION:A system controller 1 of an exposure unit has, in addition to a shot map, alignment data, mapping data of a sheet resistance (rhoS) of a substrate 7, level-divides exposure conditions of chips in the substrate 7 and sends data of the exposure conditions to a firing circuit I/F 12, an actuator I/F 4 through a data bus 3. Accordingly, since an exposure time in the same substrate can be controlled at each one shot, a width of the resistor can be altered at each one chip, and resistance values become uniform at the respective positions on the substrate. |
