| 摘要 |
The present invention relates to a method for making a unidimensional or bidimensional discontinuity lattice, in or at the surface of a crystalline substrate. The method according to the invention comprises the utilization or creation of areas favorable to the development of sources of dislocations in or at the surface of a substrate, and the activation of shear systems by subjecting the substrate to stress fields. When one or two stress fields are applied, a unidimensional or, respectively, bidimensional discontinuity lattice is achieved. Lattices are obtained wherein each element (lines or boxes) has either two or three dimensions of the order or the nanometre. The discontinuity lettices obtained may be used as active areas for microelectonic components, or as a support for the controlled growth of materials designed to provide quantum lines or boxes, for example. |
