| 摘要 |
An electrical resistive film, with high resistivity and low temp. coefficient, contains 40-95 (pref. 60-75) at.% C, 4-60 (pref. 25-30) at.% metal (pref. gp. Ib and/or VIII metal) and 1-30 (pref. 5-8) at.% H, part of the C content opt. being replaced by Si, B and/or N. A discrete electrical resistive component comprises a substrate with a 10 nm to 10 microns (pref. 50 nm to 5 microns) thick resistive film as described above. Also claimed are (i) use of the resistive film for prodn. of discrete and/or integrated resistive components; and (ii) use of the resistive component as a discrete and/or integrated component in microelectronics. Si, B and/or N may replace 1-95 (pref. 1-40)% of the C content. The metal is selected from Ag, Au, Cu, Pt and/or Pd and is in the form of crystalline particles of nm size, pref. 1-500 nm size. The substrate consists of ceramic, pref. AlN, BN, Al2O3, SiC and/or silicate ceramic.
|
| 申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV, 80636 MUENCHEN, DE;PHILIPS PATENTVERWALTUNG GMBH, 20097 HAMBURG, DE |
发明人 |
BOETTGER, ECKART, 3040 SOLTAU, DE;DIMIGEN, HEINZ, PROF. DR., 2000 HAMBURG, DE;KLAGES, CLAUS-PETER, DR., 2000 HAMBURG, DE;TAUBE, KLAUS, DR., 2000 HAMBURG, DE;THYEN, RUDOLF, 2309 BOTHKAMP, DE;HUEBSCH, HUBERTUS, 2000 HAMBURG, DE;VEYHL, RAINER, 2240 HEIDE, DE;WEBER ANDREAS DR |
