发明名称 |
BONDED WAFER PROCESSING |
摘要 |
Warpage in a bonded wafer is limited by maintenance of a stress compensation layer on the backside of the bonded wafer during device fabrication processing. One embodiment applies a sacrificial polysilicon layer over a stress compensation silicon dioxide layer for bonded silicon wafers. The fabrication processing consumes the polysilicon layer but not the stress compensation silicon dioxide. |
申请公布号 |
WO9326041(A1) |
申请公布日期 |
1993.12.23 |
申请号 |
WO1993US05828 |
申请日期 |
1993.06.17 |
申请人 |
HARRIS CORPORATION |
发明人 |
BEASOM, JAMES, DOUGLAS;MCLACHLAN, CRAIG, JAMES |
分类号 |
H01L21/02;H01L21/20;H01L21/762;H01L27/12;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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