| 摘要 |
<p>A PN junction diode which is provided with a diffusion region (3) of first conductivity type and a diffusion region (5) of second conductivity type, which are arranged in contact with each other on a semiconductor substrate (1). In the surface of the diffusion region (3) which abuts upon the junction of the two regions (3, 5), a low concentration region (11) of the first conductivity type is provided, and the surface of this semiconductor substrate is covered with a protective film (9). No hot carrier is trapped by the protective film (9) upon reverse breakdown. Hence the diode characteristics do not deteriorate with time.</p> |
