| 摘要 |
<p>The invention is an AlxGa1-xN ultraviolet detector with extremely high responsivity at over 200 to 365 nanometers and a very sharp long wavelength cutoff. The active layer for the sensors is a single crystal AlxGa1-xN preferably deposited over a basal plane sapphire substrate using a switched atomic layer epitaxy process.</p> |
