| 摘要 |
<p>The present invention provides a method for depositing a pattern of deposited material on or within a substrate, comprising the steps of: interposing a glass mask (26, 130) between a source (138) and a substrate (24, 132), the mask having channels (140) therethrough which are arranged in a pattern and which have an average diameter of less than 1 micron; and depositing a material selected from the group of sources (138) consisting of ions, electrons, photons, metals and semiconductor materials through the glass mask into or onto the substrate. The present invention also provides semiconductor devices made by this method.</p> |
