Vertical-base CMOS compatible lateral bipolar transistor.

摘要

A lateral bipolar transistor with silicon on insulator (SOI) intrinsic base (38) and a collector (40, 42) each formed by a low temperature epitaxial (LTE) process and each orientated vertically with respect to the (SOI) substrate (14) and the emitter (22). The base width can be as narrow as in a conventional vertical transistor. Similarly, the collector width can be precisely controlled. The present lateral transistor has a current gain and operating speed comparable with those of vertical bipolar transistors. <IMAGE>