MANUFACTURING METHOD OF SUBSTRATE HAVING COMPOSITE LAYER

摘要

The substrate having a compound semiconductor layer on a single crystal silicon substrate is prepared by: forming many grooves (2) meshed in a check pattern in a compound semiconductor substrate (1) by photolithography; filling the grooves with low temp. silicon oxide film (3), to form a contact film (4) of a thickness thereon and grind the surface of the contact film; tunning the substrate (1) upside down to bond the contact surface with the opposite surface (6) of single crystal silicon substrate (5) and heat-treat at a certain temp. range; grinding the compound semiconductor substrate to form a compound semiconductor layer (1a).