Light emitting device.

摘要

A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer (2), an active layer (3), a p-type ZnMgSSe cladding layer (4), a p-type ZnSe contact layer (5) and a p-type ZnTe contact layer (6) which are stacked in this sequence on an n-type GaAs substrate (1). A p-side electrode (7) is provided on the p-type ZnTe contact layer (6). An n-side electrode (8) is provided on the back surface of the n-type GaAs substrate (1). A maltiquantum well layer (9) comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer (5) along the junction interface between the p-type ZnSe contact layer (5) and the p-type ZnTe contact layer (6). Holes injected from the p-side electrode (7) pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer (9). <IMAGE>