发明名称 |
Bipolar transistor/insulated gate transistor hybrid semiconductor device |
摘要 |
A bipolar transistor/insulated gate transistor hybrid semiconductor device comprises a well region formed on a semiconductor substrate to serve as a first active region of a bipolar transistor, an insulated gate transistor having source and drain regions formed in the well region, which acts as a back gate of the insulated gate transistor, and second and third active regions of the bipolar transistor formed in the well region. At least one of the second and third active regions is used in common to one of the source and drain regions of the insulated gate transistor. A plurality of well regions is regularly arranged to constitute a gate array.
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申请公布号 |
US5272366(A) |
申请公布日期 |
1993.12.21 |
申请号 |
US19910747864 |
申请日期 |
1991.08.20 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SEI, TOSHIKAZU;TANAKA, YASUNORI;HARA, HIROYUKI |
分类号 |
H01L29/73;H01L21/331;H01L21/8249;H01L27/06;H01L27/118;H01L29/732;(IPC1-7):H01L27/10;H01L29/76 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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