发明名称 Electrically programmable antifuse and fabrication processes
摘要 A process for fabricating a metal-to-metal antifuse in a process sequence for forming a double layer metal interconnect structure includes the steps of forming and defining a first metal interconnect layer, forming and planarizing an inter-metal dielectric layer, forming an antifuse cell opening in the inter-metal dielectric layer, forming and defining an antifuse layer, forming metal-to-metal via holes in the inter-metal dielectric layer, and forming and defining a second metal interconnect layer.
申请公布号 US5272101(A) 申请公布日期 1993.12.21
申请号 US19910743261 申请日期 1991.08.09
申请人 ACTEL CORPORATION 发明人 FOROUHI, ABDUL R.;HAMDY, ESMAT Z.;HU, CHENMING;MCCOLLUM, JOHN L.
分类号 H01L23/525;H01L23/532;(IPC1-7):H01L21/44;H01L21/265 主分类号 H01L23/525
代理机构 代理人
主权项
地址