发明名称 |
Electrically programmable antifuse and fabrication processes |
摘要 |
A process for fabricating a metal-to-metal antifuse in a process sequence for forming a double layer metal interconnect structure includes the steps of forming and defining a first metal interconnect layer, forming and planarizing an inter-metal dielectric layer, forming an antifuse cell opening in the inter-metal dielectric layer, forming and defining an antifuse layer, forming metal-to-metal via holes in the inter-metal dielectric layer, and forming and defining a second metal interconnect layer.
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申请公布号 |
US5272101(A) |
申请公布日期 |
1993.12.21 |
申请号 |
US19910743261 |
申请日期 |
1991.08.09 |
申请人 |
ACTEL CORPORATION |
发明人 |
FOROUHI, ABDUL R.;HAMDY, ESMAT Z.;HU, CHENMING;MCCOLLUM, JOHN L. |
分类号 |
H01L23/525;H01L23/532;(IPC1-7):H01L21/44;H01L21/265 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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