| 摘要 |
PURPOSE:To increase the length of the life time of carrier in a semiconductor device by adding cadmium, indium, antimony or tellurium as impurity into non-monocrystal semiconductor. CONSTITUTION:A substrate 19 retained by a susceptor 20 is installed in a reaction tube 25. Reactive gas is introduced from an inlet 25 into the tube 25, fed to outlet 21 and to a needle valve 22 and vacuum pump 23 for regulating the pressure in the tube 25. The reactive gas is introduced from inlets 12, 13, 14. Cadmium, indium halogenide or hydrogen compound is introduced from an inlet 15, and antimony, tellurium halogenide or hydrogen compound is introduced from an inlet 16. Thus, cadmium, indium, antomony or tellurium is added as impurity into a substrate 19. |
