| 发明名称 |
Thin film transistor having enhance stability in electrical characteristics |
| 摘要 |
A microwave plasma enhanced CVD method and apparatus wherein a microwave is applied, after expanded, over a greater area than the area in which a desired thin film is to be formed. With this arrangement, uniform microwave application is assured to produce uniform plasma over a wide area. This enables realization of a large size liquid crystal display.
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| 申请公布号 |
US5272360(A) |
申请公布日期 |
1993.12.21 |
| 申请号 |
US19910662635 |
申请日期 |
1991.02.28 |
| 申请人 |
HITACHI, LTD. |
发明人 |
TODOROKI, SATORU;TANAKA, MASAHIRO;WATANABE, KUNIHIKO;NAKATANI, MITSUO |
| 分类号 |
C23C16/511;G02F1/1368;H01L21/318;H01L21/77;H01L21/84;H01L29/49;(IPC1-7):H01L27/01;H01L27/13;H01L29/78 |
主分类号 |
C23C16/511 |
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