| 摘要 |
SILICON BASED MASS AIRFLOW SENSOR AND ITS FABRICATION METHOD A mass airflow sensor is fabricated on a semiconductor substrate (18) and includes a dielectric diaphragm (1), p-etch-stopped silicon rim (2), thin-film heating (3) and temperature sensing elements (4-7), and tapered chip edges (18). The dielectric diaphragm (1) is formed with thin silicon oxide and silicon nitride in a sandwich structure (32) and provides excellent thermal insulation for the sensing (4-7) and heating (3) elements of the sensor. The diaphragm (1) dimensions, including thickness, are accurately controlled through the use of the heavily-p-doped silicon rim (2) to help ensure uniform and reproducible sensor performance. |
