| 发明名称 |
Electrode structure for a semiconductor device |
| 摘要 |
According to the present invention oxidation of Cu at wire bonding in a pad electrode using a Cu thin film as well as oxidation of Cu at wireless bonding in a bump electrode using a Cu thin film can be prevented.
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| 申请公布号 |
US5272376(A) |
申请公布日期 |
1993.12.21 |
| 申请号 |
US19920914049 |
申请日期 |
1992.07.14 |
| 申请人 |
CLARION CO., LTD. |
发明人 |
UENO, HIROSHI |
| 分类号 |
H01L23/485;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/485 |
| 代理机构 |
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