| 摘要 |
<p>PURPOSE:To easily form an auxiliary pattern as for the phase shift mask of an auxiliary pattern system. CONSTITUTION:A first aperture 5 is formed on a light shielding film 2 on a transparent substrate 1, and a transparent film 3 is formed on the aperture 5. Then the transparent film 3 and the light shielding film 2 are etched and second apertures 6A and 6B are formed at the peripheral part of the first aperture 5. The second apertures 6A and 6B are stably formed since the dimension of the second apertures 6A and 6B are set to the same extent as the first aperture 5.</p> |
