| 摘要 |
PURPOSE:To reduce the number of processes after receiving ROM data from the user in the manufacture of a semiconductor device and thereby enable the acceleration of delivery. CONSTITUTION:Gate insulating films 3 are formed on a substrate 1. Two gate electrodes 4, away from each other, are formed on the gate insulating films 3. A diffusion layer 5 of a conductivity type opposite to that of the substrate 1 is formed therein; the diffusion layers 5 are formed under respective gate electrodes 4 and are away from each other, accordingly. |
