| 摘要 |
PURPOSE:To decide the optimum thickness and impurity concentration of a semiconductor layer to obtain the highest photoelectric conversion efficiency from a GaAs single heterojunction solar battery through experiments or computer simulation. CONSTITUTION:In a structure constructed by successively forming an AlGaAs back surface layer of second conductivity type, second GaAs layer of the second conductivity type, first GaAs layer of first conductivity type, AlGaAs window layer of the first conductivity type on a GaAs substrate of the second conductivity type, the thickness of the first GaAs layer is set at >=0.1mum and <0.4mum. |
