| 摘要 |
PURPOSE:To form a thin film P-type silicon carbide of a low resistance and high band gas by a low high frequency power. CONSTITUTION:When P-type SiC is formed, as reaction gas for the formation, trimethyl boron in addition to silane and hydrogen are used as raw material of carbon, diborane or boron trifluoride are used as doping gas and a proper amount of trimethyl boron, diborane or boron trifluoride is added. It is desirable that the ratio of trimethyl boron/silane is around 0.45% and the ratio of diborane/silane or boron trifluoride/silane is 0.3 to 1.5%. Thereby, Eopt can be increased by about 0.1eV without lowering conductivity using a low high frequency power. Furthermore, addition of a proper amount of argon gas to reaction gas realizes good uniformity and low resistance even if a thin film is formed. As a result, a P-type SiC of low resistance and high band gas of conductivity of 7.0X10<-1> (OMEGA. cm)<-1> at Eopt of 2.26eV can be acquired. |
