| 摘要 |
PURPOSE:To obtain a light-emitting diode which has high luminance and excellent reliability by reducing the resistance of a window layer and suppressing the diffusion of a p-type impurity into an active layer in which crystals are being grown. CONSTITUTION:The hole concentration in a window layer 6a is set at p=1X10<18>cm<-3> in an 1-mum part near an active layer and at p=3X1018cm<-3> in the remaining 6-mum part. In other words, by lowering the Zn concentration in the part of the window layer 6a near the active layer, the diffusion of Zn into the active layer is suppressed and the generation of non-radiative recombination centers in the active layer can be prevented. When the Zn concentration in the part of the layer 6a far from the active layer is increased, the resistance in the layer 6a can be lowered. |
