| 摘要 |
PURPOSE:To manufacture a semiconductor crystalline thin film having excellent light emission characteristics and high quality by setting a temperature of a substrate to a range of a special value when the film having an Si-SiGe heterojunction structure is grown on the substrate and setting it to a thin film having a critical film thickness in which a crystal defect due to a dislocation does not occur. CONSTITUTION:In order to grow a semiconductor crystalline thin film having an Si-SiGe hetero,junction structure on an Si substrate A, a pressure of a vacuum chamber X is set to an extra-high vacuum of 10<-11>Torr. Then, the substrate A is heated to 600-900 deg.C and desirably 620-800 deg.C by a heater contained in a substrate holder 2. In this state, an Si molecular beam is projected from molecular beam cells 4, 6 toward the substrate A for 60sec. Then, after it is stopped for 5sec, it is further projected for 10 sec. In this case, a molecular beam of Ge is projected from molecular beam cells 5-7 for 10 sec simultaneously upon projection of the Si molecular beam for 10 sec. |
