| 摘要 |
PURPOSE:To form a largest possible chip pattern inside a circular effective exposure region in a projection aligner and to reduce the number of shooting operations for completing the exposure operation of one wafer regarding a reticle, for reduction-projection exposure, which is used to manufacture a semiconductor integrated circuit device and regarding an exposure method using said reticle. CONSTITUTION:A reticle for reduction-projection exposure is provided with one or more chip patterns 5 inside a polygon-shaped reticle pattern 2 which comes substantailly into internal contact with a circular effective exposure region 1 in a stepper. Alternatively, the reticle is composer of a plurality of chip patterns and it is provider with a cross shape as a whole. By using the reticle provided with the reticle patterns coming substantially into internal contact with the circular effective exposure region in the stepper, the chip patterns are reduced and exposed respectively so as to be close to each other in such a way that their scribing centers are made to coincide on a wafer on which a photoresist film has been formed. |
